Pattern shrinkage has been driven by shorter exposure wave length.
By employing PCP, we were able to achieve a significant reduction in LWR of 17%.
New developer, DP819A was born to achieve impressive resolution with EUV exposure.
Switzerland
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Leading supplier of photoresists offering a wide array of imaging products -
NIL (Nanoimprint Lithography)
NIL materials for semiconductor lithography process
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ArF (193nm)
Materials for positive dry and immersion imaging, and negative tone imaging (NTI)
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KrF (248nm)
Positive tone KrF photoresists covering a broad range of applications
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i-Line, g-Line and Broadband
Extensive series of mid-uv sensitive photoresists for applications encompassing sub-0.30 µm to >1.0 µm resolution
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Negative (Polyisoprene-based)
Multiple series of negative tone, polyisoprene-based resist systems
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e-Beam
Positive and negative tone resist series for a wide array of e-beam imaging applications
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