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Front End CMP Slurries

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FUJIFILM Electronic Materials Front End CMP slurries are designed for devices that utilize advanced transistor technologies such as high-K metal gates, advanced dielectrics, 3-dimensional FinFET transistors, and self-aligned contacts. Various product platforms are available to meet a broad range of process and technology requirements.

Product Summary

  • Multiple platforms with different baseline material removal selectivities
  • Tunable selectivities within each platform
  • Exceptionally low defectivity by design
  • Competitive cost of ownership

Available Front End CMP Slurries

  • FSL1600C
    • Next-generation Poly Open Polish (POP) slurry for gate last/ replacement metal gate (RMG) integrations for Logic & Memory
    • Baseline of non-selective removal of nitride, oxide, and good stop on polysilicon
    • All 3 dielectrics’ rates and selectivities are tunable
    • High purity colloidal silica and ultra-pure chemicals for ultra-low defectivity
    • Concentrated formulation for attractive cost of ownership
  • FSL1531C
    • Polysilicon slurry with stop on various dielectrics and metals
    • Very high and intermediate polysilicon rates possible. High Ti/ TiN liner rates
    • TMAH-free, EHS benign chemistry and high purity colloidal silica delivers ultra-low defectivity
    • Highly dilutable slurry offerings for attractive cost of ownership
  • FSL1700C
    • Silicon oxide slurry with stop on silicon nitride
    • Market-leading “silica – based” Shallow Trench Isolation (STI) slurry
    • Changes the industry – moves the standard for STI from ceria to silica
    • Very good stop on silicon nitride on blanket and patterned wafers
    • Slurry can further stop on other metal (such as W, Co) or dielectric (such as polysilicon) films
    • Ultra-low defectivity (vs. ceria) due to use of high purity colloidal silica
    • Critical slurry for defectivity improvement in STI applications for advanced logic and memory
    • Concentrated formulation for attractive cost of ownership (CoO)
  • FSL1820C
    • Silicon Nitride slurry with stop on silicon oxide
    • Nitride slurry for “Reverse – STI” applications such as SAC Cap, HM, Etch-Stop, etc.
    • Slurry can further stop on other metal (such as W, Co) or dielectric (such as polysilicon) films
    • High selectivity of silicon nitride to silicon oxide on blanket and patterned wafers
  • FSL1400C
    • Metal (Ti, Zr, Hf, Al) oxide slurry with non-selective rates to dielectrics
    • Tunable rates and selectivities of metal oxides and silicon-based dielectrics
    • Proprietary removal rate enhancing chemistries to obtain high film rates
    • High purity colloidal silica based dilutable formulations for ultra-low defectivity and attractive CoO
  • FSL1450C
    • Metal (Ti, Zr, Hf, Al) Oxide slurry with stop on dielectrics
    • Good stop on silicon nitride, oxide, SiGe and polysilicon films
    • Tunable rates and selectivities of metal oxides and silicon-based dielectrics
    • High purity colloidal silica based highly dilutable formulations for low defectivity and attractive CoO
  • FSL3400C
    • Tungsten slurry with either stop on dielectrics or non-selective to dielectrics
    • Good stop on silicon nitride, oxide, SiGe and poly-silicon films for stop on dielectric applications
    • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
    • High purity colloidal silica based highly dilutable formulations for ultra-low defectivity

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