Copper CMP Slurries - Overview

• High removal rates, high planarization efficiency, low topography, low defectivity, and excellent over polish margins
• Tunable formulations – with independent component knobs for customer’s specific performance targets
• High selectivity to common barrier films resulting in easy end-point detection and good Cu residual clearing without compromising topography
• Strong Prestonian behavior in Cu polishing for easy process development and control
• Low cost of ownership due to highly concentrated formulations
• Ease of use – Special cleaning chemistries or process conditions are not required

Market-leading products are available to meet the performance requirements for a broad range of process and technology requirements.

• CSL9044C
  • Developed for a wide variety of devices including memory and logic
  • Well proven and established product in Cu applications
  • Provides high removal rates to maximize process throughput
  • High selectivity to barrier films
  • Low defectivity
  • Excellent copper clearing capability
  • High planarization efficiency
  • Low dishing and erosion
  • Higher concentrates available to lower cost of ownership
• CSL9400C
  • Developed for leading edge circuits
  • Higher removal rates to maximize process throughput and reduce Cu polish to 1 platen
  • Excellent selectivity to barrier films
  • Significantly low defectivity
  • Excellent copper clearing capability
  • Low but tunable dishing and erosion
  • Suitable for a range of technology nodes including logic, memory or thick metal polishing
• CSL9500C
  • Developed for leading edge circuits including Ruthenium liner integrations
  • Provides high removal rates to maximize process throughput
  • Excellent selectivity to barrier films
  • Ultra low defectivity
  • Excellent copper clearing capability
  • Low but tunable dishing and erosion
  • Suitable for the most advanced integration applications
• CSL9215C
  • Developed for very thick metal applications
  • Ultra removal rates to maximize process throughput for TSV Copper removal
  • Excellent selectivity to barrier films
  • Low defectivity
  • Excellent copper clearing capability
  • Topography following copper clear meets TSV requirements
• CSL9280C
  • Developed for beyond BEOL, global metal layers and advanced packaging application
  • Advantageous throughput  with moderate or low topography
  • Excellent selectivity to barrier films, compatible with Ti barrier
  • Low defectivity
  • Excellent clearing capability
• CSL9300C
  • Developed and well proven for advanced Cu applications
  • Excellent within wafer and die performance
  • High selective and compatibility to advanced barrier films
  • Developed for advanced device defectivity targets
  • Excellent copper clearing capability while yielding low dishing and erosion
  • High planarization efficiency