Lithuania
Women working in lab wearing safety equipment

Emerging Metal Slurries - Overview

FUJIFILM Electronic Materials Cobalt CMP slurries are designed to polish cobalt and barrier metals and planarize all films in the circuits during advanced Cobalt interconnect polish.

  • Outstanding corrosion protection for sensitive cobalt features
  • Compatibility with a wide range of integration schemes including varies dielectrics, etch hard masks, and ARC layers
  • Tunable selectivity to meet customized film stacking and final finishing targets
  • Attractive cost of ownership – concentrated formulations available to provide lower cost at point-of-use
Product Summary

Market-leading products are available to meet a broad range of process and technology requirements.

Available Cobalt CMP Slurries
  • MSL5100C
    • Step 1 Cobalt slurry platform for removal of damascene Co metal features
    • Highly concentrated for low cost of ownership
    • Proprietary corrosion inhibitor system provides excellent corrosion protection of Cobalt metal
    • Good planarization efficiency
    • Tunable selectivity to Ti and TiN
  • MSL5200C
    • Step 2 Cobalt slurry platform for final polish of damascene Co metal and dielectric features
    • Concentrated formulation for attractive cost of ownership
    • Tunable Co removal rate, independent of other films
    • Excellent surface finish with excellent Cobalt metal protection
Available Ru CMP Slurries
  • MSL5500C
    • Ruthenium (Ru) slurry platform for removal of Ru metal features
    • Concentrated formulation for attractive cost of ownership
    • Proprietary corrosion inhibitor system provides excellent corrosion protection of Mo metal
    • Good planarization efficiency
    • High selectivity to dielectric films
Available Mo CMP Slurries
  • MSL5600C
    • Molybdenum (Mo) slurry platform for removal of damascene Mo metal features
    • Concentrated formulation for attractive cost of ownership
    • Proprietary corrosion inhibitor system provides excellent corrosion protection of Ru metal
    • Good planarization efficiency
    • High selectivity to dielectric films
Available W CMP Slurries
  • MSL3100C
    • Tungsten (W) slurry with either stop on dielectrics or non-selective to dielectrics
    • Good stop on silicon nitride, oxide, SiGe and polysilicon films for stop on dielectric applications
    • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
    • High purity colloidal silica based highly dilutable formulations for ultra-low defectivity
  • MSL3200C
    • Tungsten (W) slurry platform for final polish of W metal and dielectric features
    • Concentrated formulation for attractive cost of ownership
    • Tunable W removal rate, independent of other films
    • Excellent surface finish with excellent W metal protection

Contact Us for more information and a complete product overview