Emerging Metal Slurries - Overview

• Outstanding corrosion protection for sensitive cobalt features
• Compatibility with a wide range of integration schemes including varies dielectrics, etch hard masks, and ARC layers
• Tunable selectivity to meet customized film stacking and final finishing targets
• Attractive cost of ownership – concentrated formulations provide a lower cost point-of-use

Market-leading products are available to meet a broad range of process and technology requirements.

• MSL5100C
  • Step 1 Cobalt slurry platform for removal of damascene Co metal features
  • Highly concentrated for low cost of ownership
  • Proprietary corrosion inhibitor system provides excellent corrosion protection of Cobalt metal
  • Good planarization efficiency
  • Tunable selectivity to Ti and TiN
• MSL5200C
  • Step 2 Cobalt slurry platform for final polish of damascene Co metal and dielectric features
  • Concentrated formulation for attractive cost of ownership
  • Tunable Co removal rate, independent of other films
  • Excellent surface finish with excellent Cobalt metal protection

• MSL5400C
  • Designed for bulk Ru polishing
  • High CVD-Ru RR (>1000 A/min) 
  • Individual Tunable Ru RR
  • Excellent stopping capability on ILD
  • High planarization efficiency

• MSL5600C
  • Designed for bulk Mo polishing
  • High CVD-Mo RR (>1000 A/min) with high selectivity to TEOS and SiN
  • Individual Tunable Mo RR
  • Low Mo corrosion
  • High planarization efficiency
• MSL5700C
  • Designed for Mo buff polishing
  • Tunable selectivity to ILD, can achieve non-selective to W, TEOS and SiN
  • Individual Tunable Mo RR
  • Excellent surface finish with excellent Mo metal protection
  • Can be used for non-selective W buff CMP as well

• FSL10xxC
  • Low K bulk step slurry for subtractive Ru application
  • High Low K , Ox MRR
  • High Low K /SiN MRR selectivity
• FSL11xxC
  • Low K buff step slurry for subtractive Ru application
  • Moderate Low K , Ox, SiN MRR
  • Tunable Low K /SiN MRR selectivity for topo control

• MSL3100C
  • W bulk slurry with either stop on dielectrics or non-selective to dielectrics
  • Good stop on SiN, Oxide, SiGe and poly-silicon films for stop on dielectric applications
  • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
  • High purity colloidal silica abrasive, highly dilutable formulations for ultra-low defectivity
• MSL3200C
  • Designed for advanced tungsten buff application
  • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
  • Compatible with advanced CVD W