Extensive series of mid-uv sensitive photoresists for applications encompassing sub-0.30 µm to >1.0 µm resolution
EUV (13.5nm)
EUV materials for negative tone imaging
NIL (Nanoimprint Lithography)
NIL materials for semiconductor lithography process
ArF (193nm)
Materials for positive dry and immersion imaging, and negative tone imaging (NTI)
KrF (248nm)
Positive tone KrF photoresists covering a broad range of applications
Negative (Polyisoprene-based)
Multiple series of negative tone, polyisoprene-based resist systems
e-Beam
Positive and negative tone resist series for a wide array of e-beam imaging applications