- Outstanding corrosion protection for sensitive cobalt features
- Compatibility with a wide range of integration schemes including varies dielectrics, etch hard masks, and ARC layers
- Tunable selectivity to meet customized film stacking and final finishing targets
- Attractive cost of ownership – concentrated formulations provide a lower cost point-of-use
Market-leading products are available to meet a broad range of process and technology requirements.
- MSL5100C
- Step 1 Cobalt slurry platform for removal of damascene Co metal features
- Highly concentrated for low cost of ownership
- Proprietary corrosion inhibitor system provides excellent corrosion protection of Cobalt metal
- Good planarization efficiency
- Tunable selectivity to Ti and TiN
- MSL5200C
- Step 2 Cobalt slurry platform for final polish of damascene Co metal and dielectric features
- Concentrated formulation for attractive cost of ownership
- Tunable Co removal rate, independent of other films
- Excellent surface finish with excellent Cobalt metal protection
- MSL5400C
- Designed for bulk Ru polishing
- High CVD-Ru RR (>1000 A/min)
- Individual Tunable Ru RR
- Excellent stopping capability on ILD
- High planarization efficiency
- MSL5600C
- Designed for bulk Mo polishing
- High CVD-Mo RR (>1000 A/min) with high selectivity to TEOS and SiN
- Individual Tunable Mo RR
- Low Mo corrosion
- High planarization efficiency
- MSL5700C
- Designed for Mo buff polishing
- Tunable selectivity to ILD, can achieve non-selective to W, TEOS and SiN
- Individual Tunable Mo RR
- Excellent surface finish with excellent Mo metal protection
- Can be used for non-selective W buff CMP as well
- FSL10xxC
- Low K bulk step slurry for subtractive Ru application
- High Low K , Ox MRR
- High Low K /SiN MRR selectivity
- FSL11xxC
- Low K buff step slurry for subtractive Ru application
- Moderate Low K , Ox, SiN MRR
- Tunable Low K /SiN MRR selectivity for topo control
- MSL3100C
- W bulk slurry with either stop on dielectrics or non-selective to dielectrics
- Good stop on SiN, Oxide, SiGe and poly-silicon films for stop on dielectric applications
- Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
- High purity colloidal silica abrasive, highly dilutable formulations for ultra-low defectivity
- MSL3200C
- Designed for advanced tungsten buff application
- Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
- Compatible with advanced CVD W
