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Emerging Metal Slurries - Overview

FUJIFILM Electronic Materials Cobalt CMP slurries are designed to polish cobalt and barrier metals and planarize all films in the circuits during advanced Cobalt interconnect polish.

  • Outstanding corrosion protection for sensitive cobalt features
  • Compatibility with a wide range of integration schemes including varies dielectrics, etch hard masks, and ARC layers
  • Tunable selectivity to meet customized film stacking and final finishing targets
  • Attractive cost of ownership – concentrated formulations provide a lower cost point-of-use
Product Lineup

Market-leading products are available to meet a broad range of process and technology requirements.

Co Application
  • MSL5100C
    • Step 1 Cobalt slurry platform for removal of damascene Co metal features
    • Highly concentrated for low cost of ownership
    • Proprietary corrosion inhibitor system provides excellent corrosion protection of Cobalt metal
    • Good planarization efficiency
    • Tunable selectivity to Ti and TiN
  • MSL5200C
    • Step 2 Cobalt slurry platform for final polish of damascene Co metal and dielectric features
    • Concentrated formulation for attractive cost of ownership
    • Tunable Co removal rate, independent of other films
    • Excellent surface finish with excellent Cobalt metal protection
Ru Application
  • MSL5400C
    • Designed for bulk Ru polishing
    • High CVD-Ru RR (>1000 A/min) 
    • Individual Tunable Ru RR
    • Excellent stopping capability on ILD
    • High planarization efficiency
Mo Application
  • MSL5600C
    • Designed for bulk Mo polishing
    • High CVD-Mo RR (>1000 A/min) with high selectivity to TEOS and SiN
    • Individual Tunable Mo RR
    • Low Mo corrosion
    • High planarization efficiency
  • MSL5700C
    • Designed for Mo buff polishing
    • Tunable selectivity to ILD, can achieve non-selective to W, TEOS and SiN
    • Individual Tunable Mo RR
    • Excellent surface finish with excellent Mo metal protection
    • Can be used for non-selective W buff CMP as well
Subtractive Ru Application
  • FSL10xxC
    • Low K bulk step slurry for subtractive Ru application
    • High Low K , Ox MRR
    • High Low K /SiN MRR selectivity
  • FSL11xxC
    • Low K buff step slurry for subtractive Ru application
    • Moderate Low K , Ox, SiN MRR
    • Tunable Low K /SiN MRR selectivity for topo control
W Application
  • MSL3100C
    • W bulk slurry with either stop on dielectrics or non-selective to dielectrics
    • Good stop on SiN, Oxide, SiGe and poly-silicon films for stop on dielectric applications
    • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
    • High purity colloidal silica abrasive, highly dilutable formulations for ultra-low defectivity
  • MSL3200C
    • Designed for advanced tungsten buff application
    • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
    • Compatible with advanced CVD W