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Copper CMP Slurries

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FUJIFILM Electronic Materials copper CMP slurries are designed to remove the copper overfill to expose underlying damascene interconnects.

  • High removal rates, high planarization efficiency, low topography, low defectivity, and excellent over polish margins
  • Tunable formulations – with independent component knobs for customers’ specific performance targets
  • High selectivity to common barrier films resulting in easy end-point detection and good copper residual clearing without compromising topography
  • Strong Prestonian behavior in copper polishing for easy process development and control
  • Low cost of ownership due to highly concentrated formulations
  • Ease of use – special cleaning chemistries or process conditions are not required

Product Summary

Market-leading products are available to meet the performance requirements for a broad range of process and technology requirements.

Available Copper CMP Slurries

  • CSL9044C
    • Developed for a wide variety of devices including leading edge circuits
    • Well proven and established product in copper applications
    • Provides high removal rates to maximize process throughput
    • High selectivity to barrier films
    • Low defectivity
    • Excellent copper clearing capability
    • High planarization efficiency
    • Low dishing and erosion
    • Robust process can be developed for a great range of applications from mature technology nodes to the most advanced nodes including thick metal layers
  • CSL9400C
    • Developed for leading edge circuits
    • Higher removal rates to maximize process throughput and reduce copper polish to one (1) platen
    • Excellent selectivity to barrier films
    • Significantly low defectivity
    • Excellent copper clearing capability
    • Low but tunable dishing and erosion
    • Suitable for a range of technology nodes including logic, memory or thick metal polishing
  • CSL9500C
    • Developed for leading edge circuits including Ruthenium liner integrations
    • Provides high removal rates to maximize process throughput
    • Excellent selectivity to barrier films
    • Ultra low defectivity
    • Excellent copper clearing capability
    • Low but tunable dishing and erosion
    • Suitable for the most advanced integration applications
  • CSL9215C
    • Developed for very thick metal applications
    • Removal rates to maximize process throughput for TSV copper polish
    • Excellent selectivity to barrier films
    • Low defectivity
    • Excellent copper clearing capability
    • Topography following copper clear meets TSV requirements
  • CSL9300C
    • Developed for defect sensitive applications
    • Ultra low defectivity, particularly for scratches
    • Best suited for semi-hard pad copper bulk processing for great planarization efficiency, low topography, and excellent copper clearing
    • Excellent selectivity to barrier materials and low k materials, especially for advanced applications with thin barrier layers
    • Provides high removal rates to maximize process throughput

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