Italy
Women working in lab wearing safety equipment

Emerging Metal Slurries

NEW

FUJIFILM Electronic Materials Cobalt CMP slurries are designed to polish cobalt and barrier metals and planarize all films in the circuits during advanced Cobalt interconnect polish.

  • Outstanding corrosion protection for sensitive cobalt features
  • Compatibility with a wide range of integration schemes including varies dielectrics, etch hard masks, and ARC layers
  • Tunable selectivity to meet customized film stacking and final finishing targets
  • Attractive cost of ownership – concentrated formulations available to provide lower cost at point-of-use

Product Summary

Market-leading products are available to meet a broad range of process and technology requirements.

Available Cobalt CMP Slurries

  • MSL5100C
    • Step 1 Cobalt slurry platform for removal of damascene Co metal features
    • Highly concentrated for low cost of ownership
    • Proprietary corrosion inhibitor system provides excellent corrosion protection of Cobalt metal
    • Good planarization efficiency
    • Tunable selectivity to Ti and TiN
  • MSL5200C
    • Step 2 Cobalt slurry platform for final polish of damascene Co metal and dielectric features
    • Concentrated formulation for attractive cost of ownership
    • Tunable Co removal rate, independent of other films
    • Excellent surface finish with excellent Cobalt metal protection

Available Ru CMP Slurries

  • MSL5500C
    • Ruthenium (Ru) slurry platform for removal of Ru metal features
    • Concentrated formulation for attractive cost of ownership
    • Proprietary corrosion inhibitor system provides excellent corrosion protection of Mo metal
    • Good planarization efficiency
    • High selectivity to dielectric films

Available Mo CMP Slurries

  • MSL5600C
    • Molybdenum (Mo) slurry platform for removal of damascene Mo metal features
    • Concentrated formulation for attractive cost of ownership
    • Proprietary corrosion inhibitor system provides excellent corrosion protection of Ru metal
    • Good planarization efficiency
    • High selectivity to dielectric films

Available W CMP Slurries

  • MSL3100C
    • Tungsten (W) slurry with either stop on dielectrics or non-selective to dielectrics
    • Good stop on silicon nitride, oxide, SiGe and polysilicon films for stop on dielectric applications
    • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
    • High purity colloidal silica based highly dilutable formulations for ultra-low defectivity
  • MSL3200C
    • Tungsten (W) slurry platform for final polish of W metal and dielectric features
    • Concentrated formulation for attractive cost of ownership
    • Tunable W removal rate, independent of other films
    • Excellent surface finish with excellent W metal protection

Contact Us for more information and a complete product overview