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Home Business Semiconductor Materials Photoresists EUV (13.5nm)
An image of a wafer, a semiconductor material that is illuminated by multiple lights.

EUV (13.5nm) - Overview

EUV materials for negative tone imaging

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EUV resist for NTI (Negative Tone Imaging) process.
NTI developer that uses a high-purity organic solvent to suppress resist swelling and defects during development, enabling the formation of sharp, fine circuit patterns.

Key technology for EUV-NTI process
Technology summary of EUV NTI process by FUJIFILM
This image shows how 2 of Fujifilm's key technologies are used in the semiconductor manufacturing process. The PCP technology of EUV resists synthesizes a new structure that combines PAG, a photoacid generator, and PDQ, a photodegradable quencher, in the coating process to achieve uniform molecule distribution in the film. In the development process, the NTI developer DP819A, a mixture of DP001 (nBA) and a hydrophobic solvent X, suppresses resist film swelling by selective volatilization during spin drying.
  • *1 Photo Decomposable Quencher
Product Lineup
  • EUV NTI CAR
  • EUV NTI developer DP819A
Features & Benefits
  • PAG connected photo decomposable quencher (PCP) with a reaction control function of the resist is introduced. By maintaining a uniform acid concentration in the film during exposure, the LWR, which has been a problem with conventional chemically amplified resists, is reduced.
  • NTI developer using high-purity organic solvent suppresses resist swelling and defects during development for high patterning accuracy.
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