- High removal rates, high planarization efficiency, low topography, low defectivity, and excellent over polish margins
- Tunable formulations – with independent component knobs for customer’s specific performance targets
- High selectivity to common barrier films resulting in easy end-point detection and good Cu residual clearing without compromising topography
- Strong Prestonian behavior in Cu polishing for easy process development and control
- Low cost of ownership due to highly concentrated formulations
- Ease of use – Special cleaning chemistries or process conditions are not required
Market-leading products are available to meet the performance requirements for a broad range of process and technology requirements.
- CSL9044C
- Developed for a wide variety of devices including memory and logic
- Well proven and established product in Cu applications
- Provides high removal rates to maximize process throughput
- High selectivity to barrier films
- Low defectivity
- Excellent copper clearing capability
- High planarization efficiency
- Low dishing and erosion
- Higher concentrates available to lower cost of ownership
- CSL9400C
- Developed for leading edge circuits
- Higher removal rates to maximize process throughput and reduce Cu polish to 1 platen
- Excellent selectivity to barrier films
- Significantly low defectivity
- Excellent copper clearing capability
- Low but tunable dishing and erosion
- Suitable for a range of technology nodes including logic, memory or thick metal polishing
- CSL9500C
- Developed for leading edge circuits including Ruthenium liner integrations
- Provides high removal rates to maximize process throughput
- Excellent selectivity to barrier films
- Ultra low defectivity
- Excellent copper clearing capability
- Low but tunable dishing and erosion
- Suitable for the most advanced integration applications
- CSL9215C
- Developed for very thick metal applications
- Ultra removal rates to maximize process throughput for TSV Copper removal
- Excellent selectivity to barrier films
- Low defectivity
- Excellent copper clearing capability
- Topography following copper clear meets TSV requirements
- CSL9280C
- Developed for beyond BEOL, global metal layers and advanced packaging application
- Advantageous throughput with moderate or low topography
- Excellent selectivity to barrier films, compatible with Ti barrier
- Low defectivity
- Excellent clearing capability
- CSL9300C
- Developed and well proven for advanced Cu applications
- Excellent within wafer and die performance
- High selective and compatibility to advanced barrier films
- Developed for advanced device defectivity targets
- Excellent copper clearing capability while yielding low dishing and erosion
- High planarization efficiency
